NZT660 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 500mA 2V.The collector emitter saturation voltage is 550mV, giving you a wide variety of design options.A VCE saturation (Max) of 550mV @ 300mA, 3A means Ic has reached its maximum value(saturated).Keeping the emitter base voltage at -5V can result in a high level of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -3A.In this part, there is a transition frequency of 75MHz.The breakdown input voltage is 60V volts.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
NZT660 Features
the DC current gain for this device is 100 @ 500mA 2V
a collector emitter saturation voltage of 550mV
the vce saturation(Max) is 550mV @ 300mA, 3A
the emitter base voltage is kept at -5V
the current rating of this device is -3A
a transition frequency of 75MHz
NZT660 Applications
There are a lot of ON Semiconductor NZT660 applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting
