DXT2010P5-13 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 2A 1V.This system offers maximum design flexibility due to a collector emitter saturation voltage of 260mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 260mV @ 300mA, 6A.Single BJT transistor is essential to maintain the continuous collector voltage at 6A to achieve high efficiency.The base voltage of the emitter can be kept at 7V to achieve high efficiency.130MHz is present in the transition frequency.There is a breakdown input voltage of 60V volts that it can take.The maximum collector current is 6A volts.
DXT2010P5-13 Features
the DC current gain for this device is 100 @ 2A 1V
a collector emitter saturation voltage of 260mV
the vce saturation(Max) is 260mV @ 300mA, 6A
the emitter base voltage is kept at 7V
a transition frequency of 130MHz
DXT2010P5-13 Applications
There are a lot of Diodes Incorporated DXT2010P5-13 applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting
