2SC5964-S-TD-E

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Manufacturer part number:2SC5964-S-TD-E

Manufacturer:ON Semiconductor

Description:2SC5964-S-TD-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:2SC5964-S-TD-E Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	2 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-243AA
Packaging	Tape & Reel (TR)
Published	2013
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Power Dissipation	1.3W
Power - Max	1.3W
Transistor Type	NPN
Collector Emitter Voltage (VCEO)	290mV
Max Collector Current	3A
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 100mA 2V
Current - Collector Cutoff (Max)	1μA ICBO
Vce Saturation (Max) @ Ib, Ic	290mV @ 100mA, 2A
Collector Emitter Breakdown Voltage	50V
Frequency - Transition	380MHz
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
1	$0.914252	$0.914252
10	$0.862502	$8.62502
100	$0.813681	$81.3681
500	$0.767624	$383.812
1000	$0.724173	$724.173

2SC5964-S-TD-E Overview

DC current gain in this device equals 200 @ 100mA 2V, which is the ratio of the base current to the collector current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 290mV @ 100mA, 2A.During maximum operation, collector current can be as low as 3A volts.