KSC2328AYBU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KSC2328AYBU Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 week ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 Long Body
Number of Pins
3
Weight
185mg
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Bulk
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
30V
Max Power Dissipation
1W
Terminal Position
BOTTOM
Current Rating
2A
Frequency
120MHz
Base Part Number
KSC2328A
Number of Elements
1
Element Configuration
Single
Power Dissipation
1W
Transistor Application
AMPLIFIER
Gain Bandwidth Product
120MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
30V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
160 @ 500mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
2V @ 30mA, 1.5A
Collector Emitter Breakdown Voltage
30V
Transition Frequency
120MHz
Collector Emitter Saturation Voltage
2V
Collector Base Voltage (VCBO)
30V
Emitter Base Voltage (VEBO)
5V
hFE Min
100
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.070480
$0.07048
500
$0.051824
$25.912
1000
$0.043186
$43.186
2000
$0.039620
$79.24
5000
$0.037028
$185.14
10000
$0.034445
$344.45
15000
$0.033312
$499.68
50000
$0.032756
$1637.8
KSC2328AYBU Product Details
KSC2328AYBU Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 160 @ 500mA 2V DC current gain.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2V, which allows maximum flexibilSingle BJT transistory in design.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2V @ 30mA, 1.5A.Emitter base voltages of 5V can achieve high levels of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 2A current rating.There is a transition frequency of 120MHz in the part.A maximum collector current of 2A volts is possible.
KSC2328AYBU Features
the DC current gain for this device is 160 @ 500mA 2V a collector emitter saturation voltage of 2V the vce saturation(Max) is 2V @ 30mA, 1.5A the emitter base voltage is kept at 5V the current rating of this device is 2A a transition frequency of 120MHz
KSC2328AYBU Applications
There are a lot of ON Semiconductor KSC2328AYBU applications of single BJT transistors.