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KSC2328AYBU

KSC2328AYBU

KSC2328AYBU

ON Semiconductor

KSC2328AYBU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSC2328AYBU Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body
Number of Pins 3
Weight 185mg
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Bulk
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 30V
Max Power Dissipation 1W
Terminal Position BOTTOM
Current Rating 2A
Frequency 120MHz
Base Part Number KSC2328A
Number of Elements 1
Element Configuration Single
Power Dissipation 1W
Transistor Application AMPLIFIER
Gain Bandwidth Product 120MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 500mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 2V @ 30mA, 1.5A
Collector Emitter Breakdown Voltage 30V
Transition Frequency 120MHz
Collector Emitter Saturation Voltage 2V
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 5V
hFE Min 100
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.070480 $0.07048
500 $0.051824 $25.912
1000 $0.043186 $43.186
2000 $0.039620 $79.24
5000 $0.037028 $185.14
10000 $0.034445 $344.45
15000 $0.033312 $499.68
50000 $0.032756 $1637.8
KSC2328AYBU Product Details

KSC2328AYBU Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 160 @ 500mA 2V DC current gain.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2V, which allows maximum flexibilSingle BJT transistory in design.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2V @ 30mA, 1.5A.Emitter base voltages of 5V can achieve high levels of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 2A current rating.There is a transition frequency of 120MHz in the part.A maximum collector current of 2A volts is possible.

KSC2328AYBU Features


the DC current gain for this device is 160 @ 500mA 2V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 30mA, 1.5A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 120MHz

KSC2328AYBU Applications


There are a lot of ON Semiconductor KSC2328AYBU applications of single BJT transistors.

  • Muting
  • Inverter
  • Interface
  • Driver

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