2SB815-6-TB-E Overview
In this device, the DC current gain is 200 @ 50mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -15mV.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).With the emitter base voltage set at -5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 250MHz.During maximum operation, collector current can be as low as 700mA volts.
2SB815-6-TB-E Features
the DC current gain for this device is 200 @ 50mA 2V
a collector emitter saturation voltage of -15mV
the vce saturation(Max) is 80mV @ 10mA, 100mA
the emitter base voltage is kept at -5V
a transition frequency of 250MHz
2SB815-6-TB-E Applications
There are a lot of ON Semiconductor 2SB815-6-TB-E applications of single BJT transistors.
- Inverter
- Driver
- Muting
- Interface
