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DXT2907A-13

DXT2907A-13

DXT2907A-13

Diodes Incorporated

DXT2907A-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

DXT2907A-13 Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 19 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4
Weight 51.993025mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Type General Purpose
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation1W
Terminal FormFLAT
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Base Part Number DXT2907A
Pin Count4
JESD-30 Code R-PSSO-F3
Number of Elements 1
Element ConfigurationSingle
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product200MHz
Transistor Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Current - Collector Cutoff (Max) 10nA ICBO
Vce Saturation (Max) @ Ib, Ic 1.6V @ 50mA, 500mA
Collector Emitter Breakdown Voltage60V
Max Frequency 200MHz
Transition Frequency 200MHz
Collector Emitter Saturation Voltage-1.6V
Max Breakdown Voltage 60V
Collector Base Voltage (VCBO) -60V
Emitter Base Voltage (VEBO) -5V
Turn Off Time-Max (toff) 100ns
Height 1.5mm
Length 4.5mm
Width 2.48mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:12549 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.248065$0.248065
10$0.234024$2.34024
100$0.220777$22.0777
500$0.208280$104.14
1000$0.196491$196.491

DXT2907A-13 Product Details

DXT2907A-13 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 10V.A collector emitter saturation voltage of -1.6V allows maximum design flexibility.A VCE saturation (Max) of 1.6V @ 50mA, 500mA means Ic has reached its maximum value(saturated).If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.A transition frequency of 200MHz is present in the part.As a result, it can handle voltages as low as 60V volts.Single BJT transistor is possible to have a collector current as low as 600mA volts at Single BJT transistors maximum.

DXT2907A-13 Features


the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of -1.6V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at -5V
a transition frequency of 200MHz

DXT2907A-13 Applications


There are a lot of Diodes Incorporated DXT2907A-13 applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting

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