DXT2907A-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
DXT2907A-13 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
19 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
4
Weight
51.993025mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Type
General Purpose
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
1W
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
DXT2907A
Pin Count
4
JESD-30 Code
R-PSSO-F3
Number of Elements
1
Element Configuration
Single
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
200MHz
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
600mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 10V
Current - Collector Cutoff (Max)
10nA ICBO
Vce Saturation (Max) @ Ib, Ic
1.6V @ 50mA, 500mA
Collector Emitter Breakdown Voltage
60V
Max Frequency
200MHz
Transition Frequency
200MHz
Collector Emitter Saturation Voltage
-1.6V
Max Breakdown Voltage
60V
Collector Base Voltage (VCBO)
-60V
Emitter Base Voltage (VEBO)
-5V
Turn Off Time-Max (toff)
100ns
Height
1.5mm
Length
4.5mm
Width
2.48mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.248065
$0.248065
10
$0.234024
$2.34024
100
$0.220777
$22.0777
500
$0.208280
$104.14
1000
$0.196491
$196.491
DXT2907A-13 Product Details
DXT2907A-13 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 10V.A collector emitter saturation voltage of -1.6V allows maximum design flexibility.A VCE saturation (Max) of 1.6V @ 50mA, 500mA means Ic has reached its maximum value(saturated).If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.A transition frequency of 200MHz is present in the part.As a result, it can handle voltages as low as 60V volts.Single BJT transistor is possible to have a collector current as low as 600mA volts at Single BJT transistors maximum.
DXT2907A-13 Features
the DC current gain for this device is 100 @ 150mA 10V a collector emitter saturation voltage of -1.6V the vce saturation(Max) is 1.6V @ 50mA, 500mA the emitter base voltage is kept at -5V a transition frequency of 200MHz
DXT2907A-13 Applications
There are a lot of Diodes Incorporated DXT2907A-13 applications of single BJT transistors.