DXT3906-13 Overview
In this device, the DC current gain is 100 @ 10mA 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -400mV.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 5mA, 50mA.Keeping the emitter base voltage at -5V can result in a high level of efficiency.A transition frequency of 250MHz is present in the part.Single BJT transistor can be broken down at a voltage of 40V volts.Single BJT transistor is possible to have a collector current as low as 200mA volts at Single BJT transistors maximum.
DXT3906-13 Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
a transition frequency of 250MHz
DXT3906-13 Applications
There are a lot of Diodes Incorporated DXT3906-13 applications of single BJT transistors.
- Inverter
- Muting
- Driver
- Interface
