2SC5569-TD-E Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 500mA 2V.A collector emitter saturation voltage of 240mV ensures maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 240mV @ 175mA, 3.5A.With the emitter base voltage set at 6V, an efficient operation can be achieved.In the part, the transition frequency is 330MHz.There is a breakdown input voltage of 50V volts that it can take.In extreme cases, the collector current can be as low as 7A volts.
2SC5569-TD-E Features
the DC current gain for this device is 200 @ 500mA 2V
a collector emitter saturation voltage of 240mV
the vce saturation(Max) is 240mV @ 175mA, 3.5A
the emitter base voltage is kept at 6V
a transition frequency of 330MHz
2SC5569-TD-E Applications
There are a lot of ON Semiconductor 2SC5569-TD-E applications of single BJT transistors.
- Interface
- Driver
- Inverter
- Muting
