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BD139-16

  • BD139-16
  • BD139-16

BD139-16

BD139-16

STMicroelectronics

BD139-16 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website

SOT-23

BD139-16 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 1.25W
Base Part Number BD139
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 1.25W
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage 80V
Transition Frequency 250MHz
Collector Emitter Saturation Voltage 500mV
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
hFE Min 100
Height 10.8mm
Length 7.8mm
Width 2.7mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.47000 $0.47
50 $0.37200 $18.6
100 $0.29750 $29.75
500 $0.23378 $116.89
1,000 $0.18064 $0.18064
2,500 $0.16470 $0.3294
5,000 $0.15408 $0.7704
BD139-16 Product Details

BD139-16 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 150mA 2V DC current gain.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.When VCE saturation is 500mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).The emitter base voltage can be kept at 5V for high efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 250MHz.When collector current reaches its maximum, it can reach 1.5A volts.

BD139-16 Features


the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 250MHz

BD139-16 Applications


There are a lot of STMicroelectronics BD139-16 applications of single BJT transistors.

  • Muting
  • Inverter
  • Interface
  • Driver

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