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FMMT551TA

FMMT551TA

FMMT551TA

Diodes Incorporated

FMMT551TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

FMMT551TA Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~200°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Voltage - Rated DC -60V
Max Power Dissipation 500mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -1A
Frequency 150MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number FMMT551
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 500mW
Transistor Application SWITCHING
Gain Bandwidth Product 150MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 150mA 10V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 350mV @ 15mA, 150mA
Collector Emitter Breakdown Voltage 60V
Transition Frequency 150MHz
Collector Emitter Saturation Voltage -350mV
Max Breakdown Voltage 60V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current -1A
Height 1.1mm
Length 3mm
Width 1.4mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.221760 $0.22176
10 $0.209208 $2.09208
100 $0.197366 $19.7366
500 $0.186194 $93.097
1000 $0.175655 $175.655
FMMT551TA Product Details

FMMT551TA Overview


This device has a DC current gain of 50 @ 150mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -350mV, which allows maximum flexibilSingle BJT transistory in design.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 350mV @ 15mA, 150mA.A constant collector voltage of -1A is necessary for high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-1A).The part has a transition frequency of 150MHz.This device can take an input voltage of 60V volts before it breaks down.When collector current reaches its maximum, it can reach 1A volts.

FMMT551TA Features


the DC current gain for this device is 50 @ 150mA 10V
a collector emitter saturation voltage of -350mV
the vce saturation(Max) is 350mV @ 15mA, 150mA
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 150MHz

FMMT551TA Applications


There are a lot of Diodes Incorporated FMMT551TA applications of single BJT transistors.

  • Interface
  • Muting
  • Driver
  • Inverter

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