TIP116 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
TIP116 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Bulk
JESD-609 Code
e0
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
TIN LEAD
Additional Feature
BUILT IN BIAS RESISTANCE RATIO IS 0.06
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
240
Reach Compliance Code
unknown
[email protected] Reflow Temperature-Max (s)
30
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Power - Max
50W
Polarity/Channel Type
PNP
Transistor Type
PNP - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 1A 4V
Current - Collector Cutoff (Max)
2mA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
2.5V @ 8mA, 2A
Voltage - Collector Emitter Breakdown (Max)
80V
Current - Collector (Ic) (Max)
2A
Frequency - Transition
25MHz
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.20000
$0.2
500
$0.198
$99
1000
$0.196
$196
1500
$0.194
$291
2000
$0.192
$384
2500
$0.19
$475
TIP116 Product Details
TIP116 Overview
In this device, the DC current gain is 1000 @ 1A 4V, which is the ratio between the base current and the collector current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 2.5V @ 8mA, 2A.Device displays Collector Emitter Breakdown (80V maximal voltage).
TIP116 Features
the DC current gain for this device is 1000 @ 1A 4V the vce saturation(Max) is 2.5V @ 8mA, 2A
TIP116 Applications
There are a lot of Rochester Electronics, LLC TIP116 applications of single BJT transistors.