2N1711 PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website
SOT-23
2N1711 PBFREE Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Mounting Type
Through Hole
Package / Case
TO-205AD, TO-39-3 Metal Can
Operating Temperature
-65°C~200°C TJ
Packaging
Box
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Terminal Finish
MATTE TIN OVER NICKEL
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Power - Max
800mW
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 10V
Current - Collector Cutoff (Max)
10nA ICBO
Vce Saturation (Max) @ Ib, Ic
1.5V @ 15mA, 150mA
Voltage - Collector Emitter Breakdown (Max)
50V
Current - Collector (Ic) (Max)
500mA
Frequency - Transition
70MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.026572
$2.026572
10
$1.911860
$19.1186
100
$1.803642
$180.3642
500
$1.701548
$850.774
1000
$1.605235
$1605.235
2N1711 PBFREE Product Details
2N1711 PBFREE Overview
This device has a DC current gain of 100 @ 150mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 15mA, 150mA.Single BJT transistor shows a 50V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
2N1711 PBFREE Features
the DC current gain for this device is 100 @ 150mA 10V the vce saturation(Max) is 1.5V @ 15mA, 150mA
2N1711 PBFREE Applications
There are a lot of Central Semiconductor Corp 2N1711 PBFREE applications of single BJT transistors.