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2N1711 PBFREE

2N1711 PBFREE

2N1711 PBFREE

Central Semiconductor Corp

2N1711 PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website

SOT-23

2N1711 PBFREE Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 20 Weeks
Mounting Type Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can
Operating Temperature -65°C~200°C TJ
Packaging Box
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish MATTE TIN OVER NICKEL
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power - Max 800mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Current - Collector Cutoff (Max) 10nA ICBO
Vce Saturation (Max) @ Ib, Ic 1.5V @ 15mA, 150mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 500mA
Frequency - Transition 70MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.026572 $2.026572
10 $1.911860 $19.1186
100 $1.803642 $180.3642
500 $1.701548 $850.774
1000 $1.605235 $1605.235
2N1711 PBFREE Product Details

2N1711 PBFREE Overview


This device has a DC current gain of 100 @ 150mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 15mA, 150mA.Single BJT transistor shows a 50V maximal voltage - Collector EmSingle BJT transistorter Breakdown.

2N1711 PBFREE Features


the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.5V @ 15mA, 150mA

2N1711 PBFREE Applications


There are a lot of Central Semiconductor Corp 2N1711 PBFREE applications of single BJT transistors.

  • Muting
  • Interface
  • Inverter
  • Driver

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