MMBT3906TT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 10mA 1V.The collector emitter saturation voltage is -400mV, which allows for maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 5mA, 50mA.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -200mA current rating.There is a transition frequency of 250MHz in the part.There is a breakdown input voltage of 40V volts that it can take.The maximum collector current is 200mA volts.
MMBT3906TT1G Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is -200mA
a transition frequency of 250MHz
MMBT3906TT1G Applications
There are a lot of ON Semiconductor MMBT3906TT1G applications of single BJT transistors.
- Muting
- Interface
- Inverter
- Driver
