KSD471ACYTA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 100mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 500mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 100mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 1A.As you can see, the part has a transition frequency of 130MHz.Single BJT transistor can take a breakdown input voltage of 30V volts.A maximum collector current of 1A volts can be achieved.
KSD471ACYTA Features
the DC current gain for this device is 120 @ 100mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 130MHz
KSD471ACYTA Applications
There are a lot of ON Semiconductor KSD471ACYTA applications of single BJT transistors.
- Muting
- Driver
- Interface
- Inverter
