BC807-16LR datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
BC807-16LR Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2018
Series
Automotive, AEC-Q101
Part Status
Active
Power - Max
250mW
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 100mA 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
700mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
45V
Current - Collector (Ic) (Max)
500mA
Frequency - Transition
80MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
3,000
$0.02295
$0.06885
BC807-16LR Product Details
BC807-16LR Overview
In this device, the DC current gain is 100 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 700mV @ 50mA, 500mA.The device exhibits a collector-emitter breakdown at 45V.
BC807-16LR Features
the DC current gain for this device is 100 @ 100mA 1V the vce saturation(Max) is 700mV @ 50mA, 500mA
BC807-16LR Applications
There are a lot of Nexperia USA Inc. BC807-16LR applications of single BJT transistors.