SBCW33LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
SBCW33LT1G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 week ago)
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Number of Pins
3
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
Series
Automotive, AEC-Q101
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
300mW
Base Part Number
BCW33
Pin Count
3
Configuration
Single
Power - Max
300mW
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
250mV
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
420 @ 2mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
250mV @ 500μA, 10mA
Collector Emitter Breakdown Voltage
32V
Collector Base Voltage (VCBO)
32V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.087584
$0.087584
10
$0.082627
$0.82627
100
$0.077950
$7.795
500
$0.073538
$36.769
1000
$0.069375
$69.375
SBCW33LT1G Product Details
SBCW33LT1G Overview
DC current gain in this device equals 420 @ 2mA 5V, which is the ratio of the base current to the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 500μA, 10mA.A maximum collector current of 100mA volts can be achieved.
SBCW33LT1G Features
the DC current gain for this device is 420 @ 2mA 5V the vce saturation(Max) is 250mV @ 500μA, 10mA
SBCW33LT1G Applications
There are a lot of ON Semiconductor SBCW33LT1G applications of single BJT transistors.