SBCW33LT1G Overview
DC current gain in this device equals 420 @ 2mA 5V, which is the ratio of the base current to the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 500μA, 10mA.A maximum collector current of 100mA volts can be achieved.
SBCW33LT1G Features
the DC current gain for this device is 420 @ 2mA 5V
the vce saturation(Max) is 250mV @ 500μA, 10mA
SBCW33LT1G Applications
There are a lot of ON Semiconductor SBCW33LT1G applications of single BJT transistors.
- Driver
- Interface
- Inverter
- Muting
