DXTP03200BP5-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
DXTP03200BP5-13 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
PowerDI™ 5
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2010
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
3.2W
Terminal Position
DUAL
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
40
Pin Count
4
Number of Elements
1
Configuration
SINGLE
Power Dissipation
3.2W
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
200V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 1A 5V
Current - Collector Cutoff (Max)
50nA ICBO
JEDEC-95 Code
TO-252
Vce Saturation (Max) @ Ib, Ic
275mV @ 400mA, 2A
Collector Emitter Breakdown Voltage
200V
Transition Frequency
105MHz
Max Breakdown Voltage
200V
Frequency - Transition
105MHz
Collector Base Voltage (VCBO)
220V
Emitter Base Voltage (VEBO)
7V
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$3.014723
$3.014723
10
$2.844078
$28.44078
100
$2.683093
$268.3093
500
$2.531220
$1265.61
1000
$2.387943
$2387.943
DXTP03200BP5-13 Product Details
DXTP03200BP5-13 Overview
This device has a DC current gain of 100 @ 1A 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 275mV @ 400mA, 2A means Ic has reached its maximum value(saturated).An emitter's base voltage can be kept at 7V to gain high efficiency.As you can see, the part has a transition frequency of 105MHz.There is a breakdown input voltage of 200V volts that it can take.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.
DXTP03200BP5-13 Features
the DC current gain for this device is 100 @ 1A 5V the vce saturation(Max) is 275mV @ 400mA, 2A the emitter base voltage is kept at 7V a transition frequency of 105MHz
DXTP03200BP5-13 Applications
There are a lot of Diodes Incorporated DXTP03200BP5-13 applications of single BJT transistors.