2SC5658T2LR Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 1mA 6V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 400mV, which allows maximum flexibilSingle BJT transistory in design.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).For high efficiency, the continuous collector voltage must be kept at 150mA.The base voltage of the emitter can be kept at 7V to achieve high efficiency.This device has a current rating of 150mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 180MHz.The breakdown input voltage is 50V volts.The maximum collector current is 150mA volts.
2SC5658T2LR Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 7V
the current rating of this device is 150mA
a transition frequency of 180MHz
2SC5658T2LR Applications
There are a lot of ROHM Semiconductor 2SC5658T2LR applications of single BJT transistors.
- Interface
- Driver
- Inverter
- Muting
