KSD363RTU Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 1A 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 100mA, 1A.With the emitter base voltage set at 8V, an efficient operation can be achieved.This device has a current rating of 6A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.Parts of this part have transition frequencies of 10MHz.When collector current reaches its maximum, it can reach 6A volts.

KSD363RTU Features

the DC current gain for this device is 40 @ 1A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 100mA, 1A
the emitter base voltage is kept at 8V
the current rating of this device is 6A
a transition frequency of 10MHz

KSD363RTU Applications

There are a lot of ON Semiconductor KSD363RTU applications of single BJT transistors.

• Driver
• Inverter
• Interface
• Muting