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JANTXV2N3741

JANTXV2N3741

JANTXV2N3741

Microsemi Corporation

JANTXV2N3741 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JANTXV2N3741 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 3 weeks ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-213AA, TO-66-2
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~200°C TJ
Packaging Bulk
Published 2002
Series Military, MIL-PRF-19500/441
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Power Dissipation 25W
Terminal Position BOTTOM
Terminal Form PIN/PEG
Pin Count 2
JESD-30 Code O-MBFM-P2
Qualification Status Qualified
Number of Elements 1
Configuration SINGLE
Power Dissipation 25W
Case Connection COLLECTOR
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 250mA 1V
Current - Collector Cutoff (Max) 10μA
Vce Saturation (Max) @ Ib, Ic 600mV @ 125mA, 1A
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 7V
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
100 $27.80480 $2780.48
JANTXV2N3741 Product Details

JANTXV2N3741 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 30 @ 250mA 1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 125mA, 1A.Keeping the emitter base voltage at 7V can result in a high level of efficiency.Maximum collector currents can be below 4A volts.

JANTXV2N3741 Features


the DC current gain for this device is 30 @ 250mA 1V
the vce saturation(Max) is 600mV @ 125mA, 1A
the emitter base voltage is kept at 7V

JANTXV2N3741 Applications


There are a lot of Microsemi Corporation JANTXV2N3741 applications of single BJT transistors.

  • Muting
  • Driver
  • Interface
  • Inverter

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