FCX589TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
FCX589TA Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
3
Weight
51.993025mg
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Voltage - Rated DC
-30V
Max Power Dissipation
1W
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Current Rating
-1A
Frequency
100MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
FCX589
Number of Elements
1
Element Configuration
Single
Power Dissipation
1W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
100MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
30V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 500mA 2V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
650mV @ 200mA, 2A
Collector Emitter Breakdown Voltage
30V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
-650mV
Max Breakdown Voltage
30V
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
-5V
Continuous Collector Current
-1A
Height
1.5mm
Length
4.5mm
Width
2.5mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$11.276400
$11.2764
10
$10.638113
$106.38113
100
$10.035956
$1003.5956
500
$9.467883
$4733.9415
1000
$8.931965
$8931.965
FCX589TA Product Details
FCX589TA Overview
In this device, the DC current gain is 100 @ 500mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -650mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 650mV @ 200mA, 2A.A constant collector voltage of -1A is necessary for high efficiency.An emitter's base voltage can be kept at -5V to gain high efficiency.The current rating of this fuse is -1A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.In the part, the transition frequency is 100MHz.This device can take an input voltage of 30V volts before it breaks down.Collector current can be as low as 1A volts at its maximum.
FCX589TA Features
the DC current gain for this device is 100 @ 500mA 2V a collector emitter saturation voltage of -650mV the vce saturation(Max) is 650mV @ 200mA, 2A the emitter base voltage is kept at -5V the current rating of this device is -1A a transition frequency of 100MHz
FCX589TA Applications
There are a lot of Diodes Incorporated FCX589TA applications of single BJT transistors.