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PBHV8540T,215

PBHV8540T,215

PBHV8540T,215

Nexperia USA Inc.

PBHV8540T,215 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PBHV8540T,215 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Tolerance 5%
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Axial
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 300mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 30MHz
[email protected] Reflow Temperature-Max (s) 30
Base Part Number PBHV8540
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 300mW
Transistor Application SWITCHING
Test Current 5mA
Gain Bandwidth Product 30MHz
Polarity/Channel Type NPN
Zener Voltage 6.2V
Transistor Type NPN
Collector Emitter Voltage (VCEO) 400V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 300mA 10V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 60mA, 300mA
Collector Emitter Breakdown Voltage 400V
Transition Frequency 30MHz
Max Breakdown Voltage 400V
Collector Base Voltage (VCBO) 500V
Emitter Base Voltage (VEBO) 6V
hFE Min 200
Outside Diameter 2 mm
Zener Current 5mA
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.12730 $0.3819
6,000 $0.12060 $0.7236
15,000 $0.11390 $1.7085
30,000 $0.11055 $3.3165
PBHV8540T,215 Product Details

PBHV8540T,215 Overview


In this device, the DC current gain is 10 @ 300mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 60mA, 300mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.As a result, the part has a transition frequency of 30MHz.As a result, it can handle voltages as low as 400V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.

PBHV8540T,215 Features


the DC current gain for this device is 10 @ 300mA 10V
the vce saturation(Max) is 250mV @ 60mA, 300mA
the emitter base voltage is kept at 6V
a transition frequency of 30MHz

PBHV8540T,215 Applications


There are a lot of Nexperia USA Inc. PBHV8540T,215 applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

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