PBHV8540T,215 Overview

In this device, the DC current gain is 10 @ 300mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 60mA, 300mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.As a result, the part has a transition frequency of 30MHz.As a result, it can handle voltages as low as 400V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.

PBHV8540T,215 Features

the DC current gain for this device is 10 @ 300mA 10V
the vce saturation(Max) is 250mV @ 60mA, 300mA
the emitter base voltage is kept at 6V
a transition frequency of 30MHz

PBHV8540T,215 Applications

There are a lot of Nexperia USA Inc. PBHV8540T,215 applications of single BJT transistors.

• Inverter
• Driver
• Muting
• Interface