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PBSS3540M,315

PBSS3540M,315

PBSS3540M,315

Nexperia USA Inc.

PBSS3540M,315 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PBSS3540M,315 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-101, SOT-883
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2002
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 430mW
Terminal Position BOTTOM
Frequency 300MHz
Base Part Number PBSS3540
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 430mW
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 300MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 100mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 350mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage 40V
Transition Frequency 300MHz
Max Breakdown Voltage 40V
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 6V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.043846 $0.043846
500 $0.032240 $16.12
1000 $0.026867 $26.867
2000 $0.024648 $49.296
5000 $0.023036 $115.18
10000 $0.021429 $214.29
15000 $0.020724 $310.86
50000 $0.020378 $1018.9
PBSS3540M,315 Product Details

PBSS3540M,315 Overview


In this device, the DC current gain is 150 @ 100mA 2V, which is the ratio between the base current and the collector current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.In this part, there is a transition frequency of 300MHz.This device can take an input voltage of 40V volts before it breaks down.Collector current can be as low as 500mA volts at its maximum.

PBSS3540M,315 Features


the DC current gain for this device is 150 @ 100mA 2V
the vce saturation(Max) is 350mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz

PBSS3540M,315 Applications


There are a lot of Nexperia USA Inc. PBSS3540M,315 applications of single BJT transistors.

  • Inverter
  • Interface
  • Muting
  • Driver

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