PBSS3540M,315 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
PBSS3540M,315 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-101, SOT-883
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2002
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Power Dissipation
430mW
Terminal Position
BOTTOM
Frequency
300MHz
Base Part Number
PBSS3540
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
430mW
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
300MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
40V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
150 @ 100mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
350mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
40V
Transition Frequency
300MHz
Max Breakdown Voltage
40V
Collector Base Voltage (VCBO)
40V
Emitter Base Voltage (VEBO)
6V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.043846
$0.043846
500
$0.032240
$16.12
1000
$0.026867
$26.867
2000
$0.024648
$49.296
5000
$0.023036
$115.18
10000
$0.021429
$214.29
15000
$0.020724
$310.86
50000
$0.020378
$1018.9
PBSS3540M,315 Product Details
PBSS3540M,315 Overview
In this device, the DC current gain is 150 @ 100mA 2V, which is the ratio between the base current and the collector current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.In this part, there is a transition frequency of 300MHz.This device can take an input voltage of 40V volts before it breaks down.Collector current can be as low as 500mA volts at its maximum.
PBSS3540M,315 Features
the DC current gain for this device is 150 @ 100mA 2V the vce saturation(Max) is 350mV @ 50mA, 500mA the emitter base voltage is kept at 6V a transition frequency of 300MHz
PBSS3540M,315 Applications
There are a lot of Nexperia USA Inc. PBSS3540M,315 applications of single BJT transistors.