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MJE5731AG

MJE5731AG

MJE5731AG

ON Semiconductor

MJE5731AG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MJE5731AG Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 13 hours ago)
Contact Plating Tin
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 2004
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature LEADFORM OPTIONS ARE AVAILABLE
Subcategory Other Transistors
Voltage - Rated DC -375V
Max Power Dissipation 40W
Peak Reflow Temperature (Cel) 260
Current Rating -1A
Frequency 10MHz
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 2W
Case Connection COLLECTOR
Power - Max 40W
Transistor Application SWITCHING
Gain Bandwidth Product 10MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 375V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 300mA 10V
Current - Collector Cutoff (Max) 1mA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 1V @ 200mA, 1A
Collector Emitter Breakdown Voltage 375V
Transition Frequency 10MHz
Collector Base Voltage (VCBO) 350V
Emitter Base Voltage (VEBO) 5V
hFE Min 30
Height 6.35mm
Length 6.35mm
Width 6.35mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.16000 $1.16
50 $0.98660 $49.33
100 $0.81560 $81.56
500 $0.67888 $339.44
1,000 $0.54212 $0.54212
MJE5731AG Product Details

MJE5731AG Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 30 @ 300mA 10V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 200mA, 1A.The emitter base voltage can be kept at 5V for high efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-1A).A transition frequency of 10MHz is present in the part.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.

MJE5731AG Features


the DC current gain for this device is 30 @ 300mA 10V
the vce saturation(Max) is 1V @ 200mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 10MHz

MJE5731AG Applications


There are a lot of ON Semiconductor MJE5731AG applications of single BJT transistors.

  • Muting
  • Driver
  • Interface
  • Inverter

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