JANTX2N3700UB datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
SOT-23
JANTX2N3700UB Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
3-SMD, No Lead
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2007
Series
Military, MIL-PRF-19500/391
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Additional Feature
HIGH RELIABILITY
Max Power Dissipation
500mW
Terminal Position
DUAL
Pin Count
3
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Power Dissipation
500mW
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 500mA 10V
Current - Collector Cutoff (Max)
10μA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
80V
Collector Base Voltage (VCBO)
140V
Emitter Base Voltage (VEBO)
7V
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
100
$11.83460
$1183.46
JANTX2N3700UB Product Details
JANTX2N3700UB Overview
This device has a DC current gain of 50 @ 500mA 10V, which is the ratio between the base current and the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 50mA, 500mA.Keeping the emitter base voltage at 7V allows for a high level of efficiency.The maximum collector current is 1A volts.
JANTX2N3700UB Features
the DC current gain for this device is 50 @ 500mA 10V the vce saturation(Max) is 500mV @ 50mA, 500mA the emitter base voltage is kept at 7V
JANTX2N3700UB Applications
There are a lot of Microsemi Corporation JANTX2N3700UB applications of single BJT transistors.