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MMBT4126-7-F

MMBT4126-7-F

MMBT4126-7-F

Diodes Incorporated

MMBT4126-7-F datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

MMBT4126-7-F Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series Automotive, AEC-Q101
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -25V
Max Power Dissipation 300mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -200mA
Frequency 250MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number MMBT4126
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 300mW
Transistor Application SWITCHING
Gain Bandwidth Product 250MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 25V
Max Collector Current 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 2mA 1V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 25V
Transition Frequency 250MHz
Collector Emitter Saturation Voltage -400mV
Max Breakdown Voltage 25V
Collector Base Voltage (VCBO) 25V
Emitter Base Voltage (VEBO) -4V
hFE Min 120
Continuous Collector Current -200mA
Height 1mm
Length 3.05mm
Width 1.4mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $7.247228 $7.247228
10 $6.837008 $68.37008
100 $6.450007 $645.0007
500 $6.084912 $3042.456
1000 $5.740483 $5740.483
MMBT4126-7-F Product Details

MMBT4126-7-F Overview


In this device, the DC current gain is 120 @ 2mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.This system offers maximum design flexibility due to a collector emitter saturation voltage of -400mV.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Maintaining the continuous collector voltage at -200mA is essential for high efficiency.An emitter's base voltage can be kept at -4V to gain high efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -200mA.250MHz is present in the transition frequency.Single BJT transistor can take a breakdown input voltage of 25V volts.In extreme cases, the collector current can be as low as 200mA volts.

MMBT4126-7-F Features


the DC current gain for this device is 120 @ 2mA 1V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -4V
the current rating of this device is -200mA
a transition frequency of 250MHz

MMBT4126-7-F Applications


There are a lot of Diodes Incorporated MMBT4126-7-F applications of single BJT transistors.

  • Muting
  • Interface
  • Inverter
  • Driver

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