MMBT4126-7-F Overview

In this device, the DC current gain is 120 @ 2mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.This system offers maximum design flexibility due to a collector emitter saturation voltage of -400mV.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Maintaining the continuous collector voltage at -200mA is essential for high efficiency.An emitter's base voltage can be kept at -4V to gain high efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -200mA.250MHz is present in the transition frequency.Single BJT transistor can take a breakdown input voltage of 25V volts.In extreme cases, the collector current can be as low as 200mA volts.

MMBT4126-7-F Features

the DC current gain for this device is 120 @ 2mA 1V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -4V
the current rating of this device is -200mA
a transition frequency of 250MHz

MMBT4126-7-F Applications

There are a lot of Diodes Incorporated MMBT4126-7-F applications of single BJT transistors.

• Muting
• Interface
• Inverter
• Driver