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PHE13003C,126

  • PHE13003C,126
  • PHE13003C,126

PHE13003C,126

PHE13003C,126

WeEn Semiconductors

PHE13003C,126 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from WeEn Semiconductors stock available on our website

SOT-23

PHE13003C,126 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Operating Temperature 150°C TJ
Packaging Tape & Box (TB)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Power - Max 2.1W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 5 @ 1A 2V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 1.5V @ 500mA, 1.5A
Voltage - Collector Emitter Breakdown (Max) 400V
Current - Collector (Ic) (Max) 1.5A
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.651641 $0.651641
10 $0.614755 $6.14755
100 $0.579958 $57.9958
500 $0.547130 $273.565
1000 $0.516161 $516.161
PHE13003C,126 Product Details

PHE13003C,126 Overview


This device has a DC current gain of 5 @ 1A 2V, which is the ratio between the base current and the collector current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.5V @ 500mA, 1.5A.This device displays a 400V maximum voltage - Collector Emitter Breakdown.

PHE13003C,126 Features


the DC current gain for this device is 5 @ 1A 2V
the vce saturation(Max) is 1.5V @ 500mA, 1.5A

PHE13003C,126 Applications


There are a lot of WeEn Semiconductors PHE13003C,126 applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

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