2N6034G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2N6034G Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 week ago)
Contact Plating
Tin
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Surface Mount
NO
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Bulk
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
-40V
Max Power Dissipation
40W
Peak Reflow Temperature (Cel)
260
Current Rating
4A
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
2N6034
Pin Count
3
Number of Elements
1
Polarity
PNP
Element Configuration
Single
Power Dissipation
1.5W
Transistor Application
AMPLIFIER
Halogen Free
Halogen Free
Transistor Type
PNP - Darlington
Collector Emitter Voltage (VCEO)
40V
Max Collector Current
4A
DC Current Gain (hFE) (Min) @ Ic, Vce
750 @ 2A 3V
Current - Collector Cutoff (Max)
100μA
Vce Saturation (Max) @ Ib, Ic
3V @ 40mA, 4A
Collector Emitter Breakdown Voltage
40V
Transition Frequency
25MHz
Collector Emitter Saturation Voltage
2V
Collector Base Voltage (VCBO)
40V
Emitter Base Voltage (VEBO)
5V
Continuous Collector Current
4A
Height
11.04mm
Length
7.74mm
Width
2.66mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.77000
$0.77
10
$0.67300
$6.73
100
$0.51620
$51.62
500
$0.40804
$204.02
1,000
$0.32642
$0.32642
2N6034G Product Details
2N6034G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 750 @ 2A 3V.With a collector emitter saturation voltage of 2V, it offers maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 40mA, 4A.A 4A continuous collector voltage is necessary to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 4A.In the part, the transition frequency is 25MHz.During maximum operation, collector current can be as low as 4A volts.
2N6034G Features
the DC current gain for this device is 750 @ 2A 3V a collector emitter saturation voltage of 2V the vce saturation(Max) is 3V @ 40mA, 4A the emitter base voltage is kept at 5V the current rating of this device is 4A a transition frequency of 25MHz
2N6034G Applications
There are a lot of ON Semiconductor 2N6034G applications of single BJT transistors.