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2N6034G

2N6034G

2N6034G

ON Semiconductor

2N6034G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

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2N6034G Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Contact Plating Tin
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Surface Mount NO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Bulk
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC -40V
Max Power Dissipation 40W
Peak Reflow Temperature (Cel) 260
Current Rating 4A
[email protected] Reflow Temperature-Max (s) 40
Base Part Number 2N6034
Pin Count 3
Number of Elements 1
Polarity PNP
Element Configuration Single
Power Dissipation 1.5W
Transistor Application AMPLIFIER
Halogen Free Halogen Free
Transistor Type PNP - Darlington
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 2A 3V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 3V @ 40mA, 4A
Collector Emitter Breakdown Voltage 40V
Transition Frequency 25MHz
Collector Emitter Saturation Voltage 2V
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 4A
Height 11.04mm
Length 7.74mm
Width 2.66mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.77000 $0.77
10 $0.67300 $6.73
100 $0.51620 $51.62
500 $0.40804 $204.02
1,000 $0.32642 $0.32642
2N6034G Product Details

2N6034G Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 750 @ 2A 3V.With a collector emitter saturation voltage of 2V, it offers maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 40mA, 4A.A 4A continuous collector voltage is necessary to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 4A.In the part, the transition frequency is 25MHz.During maximum operation, collector current can be as low as 4A volts.

2N6034G Features


the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 25MHz

2N6034G Applications


There are a lot of ON Semiconductor 2N6034G applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting

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