2N3740A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
SOT-23
2N3740A Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Mount
Through Hole
Package / Case
TO-66
Number of Pins
3
Published
1999
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Additional Feature
HIGH RELIABILITY
Subcategory
Other Transistors
Max Power Dissipation
25W
Terminal Position
BOTTOM
Terminal Form
PIN/PEG
Frequency
3MHz
JESD-30 Code
O-MBFM-P2
Number of Elements
1
Polarity
PNP
Configuration
SINGLE
Power Dissipation
25W
Transistor Application
SWITCHING
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
4A
Transition Frequency
3MHz
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
7V
DC Current Gain-Min (hFE)
10
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
100
$30.62510
$3062.51
2N3740A Product Details
2N3740A Overview
A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.Parts of this part have transition frequencies of 3MHz.Single BJT transistor is possible for the collector current to fall as low as 4A volts at Single BJT transistors maximum.
2N3740A Features
the emitter base voltage is kept at 7V a transition frequency of 3MHz
2N3740A Applications
There are a lot of Microsemi Corporation 2N3740A applications of single BJT transistors.