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2N3740A

2N3740A

2N3740A

Microsemi Corporation

2N3740A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

2N3740A Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Mount Through Hole
Package / Case TO-66
Number of Pins 3
Published 1999
JESD-609 Code e0
Pbfree Code no
Part StatusActive
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Operating Temperature200°C
Min Operating Temperature -65°C
Additional FeatureHIGH RELIABILITY
Subcategory Other Transistors
Max Power Dissipation25W
Terminal Position BOTTOM
Terminal FormPIN/PEG
Frequency 3MHz
JESD-30 Code O-MBFM-P2
Number of Elements 1
Polarity PNP
Configuration SINGLE
Power Dissipation25W
Transistor Application SWITCHING
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 4A
Transition Frequency 3MHz
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 7V
DC Current Gain-Min (hFE) 10
Radiation HardeningNo
RoHS StatusNon-RoHS Compliant
In-Stock:251 items

Pricing & Ordering

QuantityUnit PriceExt. Price
100$30.62510$3062.51

2N3740A Product Details

2N3740A Overview


A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.Parts of this part have transition frequencies of 3MHz.Single BJT transistor is possible for the collector current to fall as low as 4A volts at Single BJT transistors maximum.

2N3740A Features


the emitter base voltage is kept at 7V
a transition frequency of 3MHz

2N3740A Applications


There are a lot of Microsemi Corporation 2N3740A applications of single BJT transistors.

  • Muting
  • Interface
  • Driver
  • Inverter

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