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FMMT415TD

FMMT415TD

FMMT415TD

Diodes Incorporated

FMMT415TD datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

FMMT415TD Datasheet

non-compliant

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Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Voltage - Rated DC 100V
Max Power Dissipation 330mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 500mA
Frequency 40MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number FMMT415
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 330mW
Transistor Application SWITCHING
Gain Bandwidth Product 40MHz
Transistor Type NPN - Avalanche Mode
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 10mA 10V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage 100V
Transition Frequency 40MHz
Collector Emitter Saturation Voltage 500mV
Max Breakdown Voltage 100V
Collector Base Voltage (VCBO) 320V
Emitter Base Voltage (VEBO) 6V
Continuous Collector Current 500mA
Height 1.1mm
Length 3mm
Width 1.4mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $4.156240 $4.15624
10 $3.920981 $39.20981
100 $3.699039 $369.9039
500 $3.489659 $1744.8295
1000 $3.292131 $3292.131
FMMT415TD Product Details

FMMT415TD Overview


DC current gain in this device equals 25 @ 10mA 10V, which is the ratio of the base current to the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.A constant collector voltage of 500mA is necessary for high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (500mA).A transition frequency of 40MHz is present in the part.Breakdown input voltage is 100V volts.A maximum collector current of 500mA volts can be achieved.

FMMT415TD Features


the DC current gain for this device is 25 @ 10mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 1mA, 10mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 40MHz

FMMT415TD Applications


There are a lot of Diodes Incorporated FMMT415TD applications of single BJT transistors.

  • Driver
  • Interface
  • Muting
  • Inverter

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