Welcome to Hotenda.com Online Store!

logo
userjoin
Home

KSA708YBU

KSA708YBU

KSA708YBU

ON Semiconductor

KSA708YBU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSA708YBU Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 7 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Weight 179mg
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Bulk
Published 2001
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC -60V
Max Power Dissipation 800mW
Terminal Position BOTTOM
Current Rating -700mA
Frequency 50MHz
Base Part Number KSA708
Number of Elements 1
Element Configuration Single
Power Dissipation 800mW
Transistor Application SWITCHING
Gain Bandwidth Product 50MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 700mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 50mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage 60V
Transition Frequency 50MHz
Collector Emitter Saturation Voltage -300mV
Collector Base Voltage (VCBO) -80V
Emitter Base Voltage (VEBO) -8V
hFE Min 40
Height 4.58mm
Length 4.58mm
Width 3.86mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.075840 $0.07584
500 $0.055765 $27.8825
1000 $0.046471 $46.471
2000 $0.042634 $85.268
5000 $0.039844 $199.22
10000 $0.037065 $370.65
15000 $0.035846 $537.69
50000 $0.035247 $1762.35
KSA708YBU Product Details

KSA708YBU Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 50mA 2V.A collector emitter saturation voltage of -300mV ensures maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Emitter base voltages of -8V can achieve high levels of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -700mA current rating.As a result, the part has a transition frequency of 50MHz.Single BJT transistor is possible for the collector current to fall as low as 700mA volts at Single BJT transistors maximum.

KSA708YBU Features


the DC current gain for this device is 120 @ 50mA 2V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at -8V
the current rating of this device is -700mA
a transition frequency of 50MHz

KSA708YBU Applications


There are a lot of ON Semiconductor KSA708YBU applications of single BJT transistors.

  • Muting
  • Inverter
  • Driver
  • Interface

Related Part Number

Get Subscriber

Enter Your Email Address, Get the Latest News