KSA708YBU Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 50mA 2V.A collector emitter saturation voltage of -300mV ensures maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Emitter base voltages of -8V can achieve high levels of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -700mA current rating.As a result, the part has a transition frequency of 50MHz.Single BJT transistor is possible for the collector current to fall as low as 700mA volts at Single BJT transistors maximum.
KSA708YBU Features
the DC current gain for this device is 120 @ 50mA 2V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at -8V
the current rating of this device is -700mA
a transition frequency of 50MHz
KSA708YBU Applications
There are a lot of ON Semiconductor KSA708YBU applications of single BJT transistors.
- Muting
- Inverter
- Driver
- Interface
