KSA708YBU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KSA708YBU Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
7 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Number of Pins
3
Weight
179mg
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Bulk
Published
2001
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
-60V
Max Power Dissipation
800mW
Terminal Position
BOTTOM
Current Rating
-700mA
Frequency
50MHz
Base Part Number
KSA708
Number of Elements
1
Element Configuration
Single
Power Dissipation
800mW
Transistor Application
SWITCHING
Gain Bandwidth Product
50MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
700mA
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 50mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
700mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
60V
Transition Frequency
50MHz
Collector Emitter Saturation Voltage
-300mV
Collector Base Voltage (VCBO)
-80V
Emitter Base Voltage (VEBO)
-8V
hFE Min
40
Height
4.58mm
Length
4.58mm
Width
3.86mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.075840
$0.07584
500
$0.055765
$27.8825
1000
$0.046471
$46.471
2000
$0.042634
$85.268
5000
$0.039844
$199.22
10000
$0.037065
$370.65
15000
$0.035846
$537.69
50000
$0.035247
$1762.35
KSA708YBU Product Details
KSA708YBU Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 50mA 2V.A collector emitter saturation voltage of -300mV ensures maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Emitter base voltages of -8V can achieve high levels of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -700mA current rating.As a result, the part has a transition frequency of 50MHz.Single BJT transistor is possible for the collector current to fall as low as 700mA volts at Single BJT transistors maximum.
KSA708YBU Features
the DC current gain for this device is 120 @ 50mA 2V a collector emitter saturation voltage of -300mV the vce saturation(Max) is 700mV @ 50mA, 500mA the emitter base voltage is kept at -8V the current rating of this device is -700mA a transition frequency of 50MHz
KSA708YBU Applications
There are a lot of ON Semiconductor KSA708YBU applications of single BJT transistors.