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FMMT417TD

FMMT417TD

FMMT417TD

Diodes Incorporated

FMMT417TD datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

FMMT417TD Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Voltage - Rated DC 100V
Max Power Dissipation 330mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 500mA
Frequency 40MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number FMMT417
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 330mW
Transistor Application SWITCHING
Gain Bandwidth Product 40MHz
Transistor Type NPN - Avalanche Mode
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 10mA 10V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage 100V
Transition Frequency 40MHz
Collector Emitter Saturation Voltage 500mV
Max Breakdown Voltage 100V
Collector Base Voltage (VCBO) 320V
Emitter Base Voltage (VEBO) 6V
Continuous Collector Current 500mA
Height 1.1mm
Length 3mm
Width 1.4mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $7.474560 $7.47456
10 $7.051472 $70.51472
100 $6.652332 $665.2332
500 $6.275785 $3137.8925
1000 $5.920552 $5920.552
FMMT417TD Product Details

FMMT417TD Overview


In this device, the DC current gain is 25 @ 10mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Continuous collector voltage should be kept at 500mA for high efficiency.The base voltage of the emitter can be kept at 6V to achieve high efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 500mA for this device.A transition frequency of 40MHz is present in the part.Breakdown input voltage is 100V volts.A maximum collector current of 500mA volts can be achieved.

FMMT417TD Features


the DC current gain for this device is 25 @ 10mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 1mA, 10mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 40MHz

FMMT417TD Applications


There are a lot of Diodes Incorporated FMMT417TD applications of single BJT transistors.

  • Inverter
  • Interface
  • Muting
  • Driver

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