FMMT417TD datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
FMMT417TD Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Voltage - Rated DC
100V
Max Power Dissipation
330mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
500mA
Frequency
40MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
FMMT417
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
330mW
Transistor Application
SWITCHING
Gain Bandwidth Product
40MHz
Transistor Type
NPN - Avalanche Mode
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
25 @ 10mA 10V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage
100V
Transition Frequency
40MHz
Collector Emitter Saturation Voltage
500mV
Max Breakdown Voltage
100V
Collector Base Voltage (VCBO)
320V
Emitter Base Voltage (VEBO)
6V
Continuous Collector Current
500mA
Height
1.1mm
Length
3mm
Width
1.4mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$7.474560
$7.47456
10
$7.051472
$70.51472
100
$6.652332
$665.2332
500
$6.275785
$3137.8925
1000
$5.920552
$5920.552
FMMT417TD Product Details
FMMT417TD Overview
In this device, the DC current gain is 25 @ 10mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Continuous collector voltage should be kept at 500mA for high efficiency.The base voltage of the emitter can be kept at 6V to achieve high efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 500mA for this device.A transition frequency of 40MHz is present in the part.Breakdown input voltage is 100V volts.A maximum collector current of 500mA volts can be achieved.
FMMT417TD Features
the DC current gain for this device is 25 @ 10mA 10V a collector emitter saturation voltage of 500mV the vce saturation(Max) is 500mV @ 1mA, 10mA the emitter base voltage is kept at 6V the current rating of this device is 500mA a transition frequency of 40MHz
FMMT417TD Applications
There are a lot of Diodes Incorporated FMMT417TD applications of single BJT transistors.