MJD122-1 Overview

In this device, the DC current gain is 1000 @ 4A 4V, which is the ratio between the base current and the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2V, which allows maximum flexibilSingle BJT transistory in design.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Emitter base voltages of 5V can achieve high levels of efficiency.Single BJT transistor can take a breakdown input voltage of 100V volts.When collector current reaches its maximum, it can reach 8A volts.

MJD122-1 Features

the DC current gain for this device is 1000 @ 4A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 4V @ 80mA, 8A
the emitter base voltage is kept at 5V

MJD122-1 Applications

There are a lot of STMicroelectronics MJD122-1 applications of single BJT transistors.

• Inverter
• Driver
• Muting
• Interface