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2SCR372P5T100Q

2SCR372P5T100Q

2SCR372P5T100Q

ROHM Semiconductor

2SCR372P5T100Q datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SCR372P5T100Q Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation500mW
Terminal Position SINGLE
Terminal FormFLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-F3
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 500mW
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 700mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 100mA 5V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage120V
Transition Frequency 220MHz
Max Breakdown Voltage 120V
Frequency - Transition 220MHz
RoHS StatusROHS3 Compliant
In-Stock:11324 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.324784$0.324784
10$0.306400$3.064
100$0.289057$28.9057
500$0.272695$136.3475
1000$0.257259$257.259

2SCR372P5T100Q Product Details

2SCR372P5T100Q Overview


This device has a DC current gain of 120 @ 100mA 5V, which is the ratio between the collector current and the base current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 50mA, 500mA.In this part, there is a transition frequency of 220MHz.The breakdown input voltage is 120V volts.Collector current can be as low as 700mA volts at its maximum.

2SCR372P5T100Q Features


the DC current gain for this device is 120 @ 100mA 5V
the vce saturation(Max) is 300mV @ 50mA, 500mA
a transition frequency of 220MHz

2SCR372P5T100Q Applications


There are a lot of ROHM Semiconductor 2SCR372P5T100Q applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting

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