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PBSS5240XX

  • PBSS5240XX
  • PBSS5240XX

PBSS5240XX

PBSS5240XX

Nexperia USA Inc.

PBSS5240XX datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PBSS5240XX Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 3
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2012
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 500mW
Base Part Number PBSS5240
Pin Count 3
Power - Max 500mW
Transistor Type PNP
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 145 @ 1A 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 170mV @ 50mA, 500mA
Frequency - Transition 150MHz
Collector Base Voltage (VCBO) 40V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.109756 $0.109756
10 $0.103544 $1.03544
100 $0.097683 $9.7683
500 $0.092154 $46.077
1000 $0.086937 $86.937
PBSS5240XX Product Details

PBSS5240XX Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 145 @ 1A 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 170mV @ 50mA, 500mA.The maximum collector current is 2A volts.

PBSS5240XX Features


the DC current gain for this device is 145 @ 1A 5V
the vce saturation(Max) is 170mV @ 50mA, 500mA

PBSS5240XX Applications


There are a lot of Nexperia USA Inc. PBSS5240XX applications of single BJT transistors.

  • Inverter
  • Interface
  • Muting
  • Driver

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