Welcome to Hotenda.com Online Store!

logo
userjoin
Home

2DD2679-13

2DD2679-13

2DD2679-13

Diodes Incorporated

2DD2679-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

2DD2679-13 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 3
Weight 51.993025mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination SMD/SMT
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation2W
Terminal FormFLAT
Peak Reflow Temperature (Cel) 260
Frequency 240MHz
[email protected] Reflow Temperature-Max (s) 40
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation2W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product240MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 270 @ 200mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 370mV @ 75mA, 1.5A
Collector Emitter Breakdown Voltage30V
Transition Frequency 240MHz
Collector Emitter Saturation Voltage370mV
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 6V
hFE Min 270
Height 1.5mm
Length 4.5mm
Width 2.5mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:16613 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.228000$0.228
10$0.215094$2.15094
100$0.202919$20.2919
500$0.191433$95.7165
1000$0.180597$180.597

2DD2679-13 Product Details

2DD2679-13 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 270 @ 200mA 2V DC current gain.This design offers maximum flexibility with a collector emitter saturation voltage of 370mV.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.An emitter's base voltage can be kept at 6V to gain high efficiency.A transition frequency of 240MHz is present in the part.A maximum collector current of 2A volts can be achieved.

2DD2679-13 Features


the DC current gain for this device is 270 @ 200mA 2V
a collector emitter saturation voltage of 370mV
the vce saturation(Max) is 370mV @ 75mA, 1.5A
the emitter base voltage is kept at 6V
a transition frequency of 240MHz

2DD2679-13 Applications


There are a lot of Diodes Incorporated 2DD2679-13 applications of single BJT transistors.

  • Muting
  • Inverter
  • Driver
  • Interface

Get Subscriber

Enter Your Email Address, Get the Latest News