NJV4031NT1G Overview
In this device, the DC current gain is 200 @ 1A 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.The collector emitter saturation voltage is 300mV, which allows for maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 300mA, 3A.Maintaining the continuous collector voltage at 3A is essential for high efficiency.With the emitter base voltage set at 6V, an efficient operation can be achieved.The part has a transition frequency of 215MHz.Maximum collector currents can be below 3A volts.
NJV4031NT1G Features
the DC current gain for this device is 200 @ 1A 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 300mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 215MHz
NJV4031NT1G Applications
There are a lot of ON Semiconductor NJV4031NT1G applications of single BJT transistors.
- Interface
- Driver
- Inverter
- Muting
