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FMMT560TA

FMMT560TA

FMMT560TA

Diodes Incorporated

FMMT560TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

FMMT560TA Datasheet

non-compliant

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Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC -500V
Max Power Dissipation 500mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -500mA
Frequency 60MHz
[email protected] Reflow Temperature-Max (s) 30
Base Part Number FMMT560
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 500mW
Gain Bandwidth Product 60MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 500V
Max Collector Current 150mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 50mA 10V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 500mV @ 10mA, 50mA
Collector Emitter Breakdown Voltage 500V
Transition Frequency 60MHz
Collector Emitter Saturation Voltage -500mV
Max Breakdown Voltage 500V
Collector Base Voltage (VCBO) 500V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current -150mA
Height 1.1mm
Length 3mm
Width 1.4mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.079698 $0.079698
10 $0.075187 $0.75187
100 $0.070931 $7.0931
500 $0.066916 $33.458
1000 $0.063128 $63.128
FMMT560TA Product Details

FMMT560TA Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 80 @ 50mA 10V.With a collector emitter saturation voltage of -500mV, it offers maximum design flexibility.When VCE saturation is 500mV @ 10mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltages of -150mA should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -500mA for this device.As you can see, the part has a transition frequency of 60MHz.There is a breakdown input voltage of 500V volts that it can take.A maximum collector current of 150mA volts can be achieved.

FMMT560TA Features


the DC current gain for this device is 80 @ 50mA 10V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 10mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is -500mA
a transition frequency of 60MHz

FMMT560TA Applications


There are a lot of Diodes Incorporated FMMT560TA applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting

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