FMMT560TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
FMMT560TA Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
-500V
Max Power Dissipation
500mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-500mA
Frequency
60MHz
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
FMMT560
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
500mW
Gain Bandwidth Product
60MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
500V
Max Collector Current
150mA
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 50mA 10V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
500mV @ 10mA, 50mA
Collector Emitter Breakdown Voltage
500V
Transition Frequency
60MHz
Collector Emitter Saturation Voltage
-500mV
Max Breakdown Voltage
500V
Collector Base Voltage (VCBO)
500V
Emitter Base Voltage (VEBO)
5V
Continuous Collector Current
-150mA
Height
1.1mm
Length
3mm
Width
1.4mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.079698
$0.079698
10
$0.075187
$0.75187
100
$0.070931
$7.0931
500
$0.066916
$33.458
1000
$0.063128
$63.128
FMMT560TA Product Details
FMMT560TA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 80 @ 50mA 10V.With a collector emitter saturation voltage of -500mV, it offers maximum design flexibility.When VCE saturation is 500mV @ 10mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltages of -150mA should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -500mA for this device.As you can see, the part has a transition frequency of 60MHz.There is a breakdown input voltage of 500V volts that it can take.A maximum collector current of 150mA volts can be achieved.
FMMT560TA Features
the DC current gain for this device is 80 @ 50mA 10V a collector emitter saturation voltage of -500mV the vce saturation(Max) is 500mV @ 10mA, 50mA the emitter base voltage is kept at 5V the current rating of this device is -500mA a transition frequency of 60MHz
FMMT560TA Applications
There are a lot of Diodes Incorporated FMMT560TA applications of single BJT transistors.