PBSS4560PA,115 Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 210 @ 2A 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 290mV @ 300mA, 6A.Emitter base voltages of 6V can achieve high levels of efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.The breakdown input voltage is 60V volts.In extreme cases, the collector current can be as low as 6A volts.

PBSS4560PA,115 Features

the DC current gain for this device is 210 @ 2A 2V
the vce saturation(Max) is 290mV @ 300mA, 6A
the emitter base voltage is kept at 6V
a transition frequency of 150MHz

PBSS4560PA,115 Applications

There are a lot of Nexperia USA Inc. PBSS4560PA,115 applications of single BJT transistors.

• Driver
• Interface
• Muting
• Inverter