DSS5160V-7 Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 150 @ 500mA 5V.A collector emitter saturation voltage of 330mV ensures maximum design flexibility.When VCE saturation is 330mV @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).The emitter base voltage can be kept at 5V for high efficiency.Parts of this part have transition frequencies of 150MHz.There is a breakdown input voltage of 60V volts that it can take.Maximum collector currents can be below 1A volts.

DSS5160V-7 Features

the DC current gain for this device is 150 @ 500mA 5V
a collector emitter saturation voltage of 330mV
the vce saturation(Max) is 330mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 150MHz

DSS5160V-7 Applications

There are a lot of Diodes Incorporated DSS5160V-7 applications of single BJT transistors.

• Inverter
• Muting
• Interface
• Driver