2SCR502UBTL Overview

DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 100mA 2V DC current gain.The collector emitter saturation voltage is 100mV, giving you a wide variety of design options.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 10mA, 200mA.Single BJT transistor is recommended to keep the continuous collector voltage at 500mA in order to achieve high efficiency.Keeping the emitter base voltage at 6V allows for a high level of efficiency.As a result, the part has a transition frequency of 360MHz.Breakdown input voltage is 30V volts.When collector current reaches its maximum, it can reach 500mA volts.

2SCR502UBTL Features

the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 300mV @ 10mA, 200mA
the emitter base voltage is kept at 6V
a transition frequency of 360MHz

2SCR502UBTL Applications

There are a lot of ROHM Semiconductor 2SCR502UBTL applications of single BJT transistors.

• Interface
• Driver
• Inverter
• Muting