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NJVMJD45H11G

NJVMJD45H11G

NJVMJD45H11G

ON Semiconductor

NJVMJD45H11G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

NJVMJD45H11G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation1.75W
Terminal Position SINGLE
Terminal FormGULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count3
Reference Standard AEC-Q101
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 1.75W
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 1V
Max Collector Current 8A
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 4A 1V
Current - Collector Cutoff (Max) 1μA
Vce Saturation (Max) @ Ib, Ic 1V @ 400mA, 8A
Collector Emitter Breakdown Voltage50V
Transition Frequency 90MHz
Frequency - Transition 90MHz
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:7684 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.97000$0.97
75$0.80560$60.42
150$0.65747$98.6205
525$0.51975$272.86875

NJVMJD45H11G Product Details

NJVMJD45H11G Overview


DC current gain in this device equals 40 @ 4A 1V, which is the ratio of the base current to the collector current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 400mA, 8A.The part has a transition frequency of 90MHz.In extreme cases, the collector current can be as low as 8A volts.

NJVMJD45H11G Features


the DC current gain for this device is 40 @ 4A 1V
the vce saturation(Max) is 1V @ 400mA, 8A
a transition frequency of 90MHz

NJVMJD45H11G Applications


There are a lot of ON Semiconductor NJVMJD45H11G applications of single BJT transistors.

  • Muting
  • Inverter
  • Interface
  • Driver

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