NST847BF3T5G Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 2mA 5V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 5mA, 100mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.As a result, the part has a transition frequency of 100MHz.Single BJT transistor can take a breakdown input voltage of 45V volts.In extreme cases, the collector current can be as low as 100mA volts.

NST847BF3T5G Features

the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz

NST847BF3T5G Applications

There are a lot of ON Semiconductor NST847BF3T5G applications of single BJT transistors.

• Inverter
• Driver
• Muting
• Interface