MBT35200MT2G Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 1.5A 1.5V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 310mV @ 20mA, 2A.The emitter base voltage can be kept at 5V for high efficiency.In extreme cases, the collector current can be as low as 2A volts.

MBT35200MT2G Features

the DC current gain for this device is 100 @ 1.5A 1.5V
the vce saturation(Max) is 310mV @ 20mA, 2A
the emitter base voltage is kept at 5V

MBT35200MT2G Applications

There are a lot of ON Semiconductor MBT35200MT2G applications of single BJT transistors.

• Interface
• Inverter
• Muting
• Driver