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FZT549TA

FZT549TA

FZT549TA

Diodes Incorporated

FZT549TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

FZT549TA Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Voltage - Rated DC -30V
Max Power Dissipation 2W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -1A
Frequency 100MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number FZT549
Number of Elements 1
Element Configuration Single
Power Dissipation 2W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 100MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500mA 2V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 750mV @ 200mA, 2A
Collector Emitter Breakdown Voltage 30V
Transition Frequency 100MHz
Collector Emitter Saturation Voltage -750mV
Max Breakdown Voltage 30V
Collector Base Voltage (VCBO) 35V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current -1A
Height 1.65mm
Length 6.7mm
Width 3.7mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.765744 $0.765744
10 $0.722400 $7.224
100 $0.681509 $68.1509
500 $0.642933 $321.4665
1000 $0.606541 $606.541
FZT549TA Product Details

FZT549TA Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 500mA 2V.This system offers maximum design flexibility due to a collector emitter saturation voltage of -750mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 750mV @ 200mA, 2A.For high efficiency, the continuous collector voltage must be kept at -1A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of -1A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.The part has a transition frequency of 100MHz.There is a breakdown input voltage of 30V volts that it can take.When collector current reaches its maximum, it can reach 1A volts.

FZT549TA Features


the DC current gain for this device is 100 @ 500mA 2V
a collector emitter saturation voltage of -750mV
the vce saturation(Max) is 750mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 100MHz

FZT549TA Applications


There are a lot of Diodes Incorporated FZT549TA applications of single BJT transistors.

  • Inverter
  • Driver
  • Interface
  • Muting

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