FZT549TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
FZT549TA Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Voltage - Rated DC
-30V
Max Power Dissipation
2W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-1A
Frequency
100MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
FZT549
Number of Elements
1
Element Configuration
Single
Power Dissipation
2W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
100MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
30V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 500mA 2V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
750mV @ 200mA, 2A
Collector Emitter Breakdown Voltage
30V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
-750mV
Max Breakdown Voltage
30V
Collector Base Voltage (VCBO)
35V
Emitter Base Voltage (VEBO)
5V
Continuous Collector Current
-1A
Height
1.65mm
Length
6.7mm
Width
3.7mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.765744
$0.765744
10
$0.722400
$7.224
100
$0.681509
$68.1509
500
$0.642933
$321.4665
1000
$0.606541
$606.541
FZT549TA Product Details
FZT549TA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 500mA 2V.This system offers maximum design flexibility due to a collector emitter saturation voltage of -750mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 750mV @ 200mA, 2A.For high efficiency, the continuous collector voltage must be kept at -1A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of -1A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.The part has a transition frequency of 100MHz.There is a breakdown input voltage of 30V volts that it can take.When collector current reaches its maximum, it can reach 1A volts.
FZT549TA Features
the DC current gain for this device is 100 @ 500mA 2V a collector emitter saturation voltage of -750mV the vce saturation(Max) is 750mV @ 200mA, 2A the emitter base voltage is kept at 5V the current rating of this device is -1A a transition frequency of 100MHz
FZT549TA Applications
There are a lot of Diodes Incorporated FZT549TA applications of single BJT transistors.