KST4401MTF Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA 1V.The collector emitter saturation voltage is 750mV, which allows for maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 750mV @ 50mA, 500mA.Keeping the emitter base voltage at 6V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.A transition frequency of 250MHz is present in the part.Breakdown input voltage is 40V volts.During maximum operation, collector current can be as low as 600mA volts.
KST4401MTF Features
the DC current gain for this device is 100 @ 150mA 1V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 250MHz
KST4401MTF Applications
There are a lot of ON Semiconductor KST4401MTF applications of single BJT transistors.
- Inverter
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- Interface
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- Muting
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- Driver
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