FZT560TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
FZT560TA Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Published
2006
JESD-609 Code
e3
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Max Power Dissipation
2W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Frequency
60MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
FZT560
Pin Count
4
JESD-30 Code
R-PDSO-G4
Number of Elements
1
Element Configuration
Single
Power Dissipation
2W
Case Connection
COLLECTOR
Gain Bandwidth Product
60MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
500V
Max Collector Current
150mA
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 50mA 10V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
500mV @ 10mA, 50mA
Collector Emitter Breakdown Voltage
500V
Transition Frequency
60MHz
Collector Emitter Saturation Voltage
-500mV
Max Breakdown Voltage
500V
Collector Base Voltage (VCBO)
500V
Emitter Base Voltage (VEBO)
5V
Continuous Collector Current
-150mA
Height
1.65mm
Length
6.7mm
Width
3.7mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.622440
$0.62244
10
$0.587208
$5.87208
100
$0.553969
$55.3969
500
$0.522613
$261.3065
1000
$0.493031
$493.031
FZT560TA Product Details
FZT560TA Overview
DC current gain in this device equals 80 @ 50mA 10V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -500mV, which allows for maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 10mA, 50mA.A -150mA continuous collector voltage is necessary to achieve high efficiency.The base voltage of the emitter can be kept at 5V to achieve high efficiency.The part has a transition frequency of 60MHz.Input voltage breakdown is available at 500V volts.Collector current can be as low as 150mA volts at its maximum.
FZT560TA Features
the DC current gain for this device is 80 @ 50mA 10V a collector emitter saturation voltage of -500mV the vce saturation(Max) is 500mV @ 10mA, 50mA the emitter base voltage is kept at 5V a transition frequency of 60MHz
FZT560TA Applications
There are a lot of Diodes Incorporated FZT560TA applications of single BJT transistors.