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FZT560TA

FZT560TA

FZT560TA

Diodes Incorporated

FZT560TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

FZT560TA Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2006
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Max Power Dissipation 2W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 60MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number FZT560
Pin Count 4
JESD-30 Code R-PDSO-G4
Number of Elements 1
Element Configuration Single
Power Dissipation 2W
Case Connection COLLECTOR
Gain Bandwidth Product 60MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 500V
Max Collector Current 150mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 50mA 10V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 500mV @ 10mA, 50mA
Collector Emitter Breakdown Voltage 500V
Transition Frequency 60MHz
Collector Emitter Saturation Voltage -500mV
Max Breakdown Voltage 500V
Collector Base Voltage (VCBO) 500V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current -150mA
Height 1.65mm
Length 6.7mm
Width 3.7mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.622440 $0.62244
10 $0.587208 $5.87208
100 $0.553969 $55.3969
500 $0.522613 $261.3065
1000 $0.493031 $493.031
FZT560TA Product Details

FZT560TA Overview


DC current gain in this device equals 80 @ 50mA 10V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -500mV, which allows for maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 10mA, 50mA.A -150mA continuous collector voltage is necessary to achieve high efficiency.The base voltage of the emitter can be kept at 5V to achieve high efficiency.The part has a transition frequency of 60MHz.Input voltage breakdown is available at 500V volts.Collector current can be as low as 150mA volts at its maximum.

FZT560TA Features


the DC current gain for this device is 80 @ 50mA 10V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 10mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 60MHz

FZT560TA Applications


There are a lot of Diodes Incorporated FZT560TA applications of single BJT transistors.

  • Muting
  • Driver
  • Inverter
  • Interface

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