SMMBTA42LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
SMMBTA42LT1G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
7 Weeks
Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
300mW
Terminal Position
DUAL
Terminal Form
GULL WING
Frequency
50MHz
Base Part Number
MMBTA42
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
300mW
Power - Max
225mW
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
300V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 30mA 10V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 2mA, 20mA
Collector Emitter Breakdown Voltage
300V
Current - Collector (Ic) (Max)
500mA
Transition Frequency
50MHz
Collector Base Voltage (VCBO)
300V
Emitter Base Voltage (VEBO)
6V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
3,000
$0.08432
$0.25296
6,000
$0.07623
$0.45738
15,000
$0.06815
$1.02225
30,000
$0.06410
$1.923
75,000
$0.05737
$4.30275
SMMBTA42LT1G Product Details
SMMBTA42LT1G Overview
DC current gain in this device equals 40 @ 30mA 10V, which is the ratio of the base current to the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 2mA, 20mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.A transition frequency of 50MHz is present in the part.In extreme cases, the collector current can be as low as 500mA volts.
SMMBTA42LT1G Features
the DC current gain for this device is 40 @ 30mA 10V the vce saturation(Max) is 500mV @ 2mA, 20mA the emitter base voltage is kept at 6V a transition frequency of 50MHz
SMMBTA42LT1G Applications
There are a lot of ON Semiconductor SMMBTA42LT1G applications of single BJT transistors.