2SC4102U3HZGT106R datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
2SC4102U3HZGT106R Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PDSO-G3
Number of Elements
1
Configuration
SINGLE
Power - Max
200mW
Transistor Application
AMPLIFIER
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
180 @ 2mA 6V
Current - Collector Cutoff (Max)
500nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max)
120V
Current - Collector (Ic) (Max)
50mA
Transition Frequency
140MHz
Frequency - Transition
140MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.013700
$1.0137
10
$0.956321
$9.56321
100
$0.902189
$90.2189
500
$0.851122
$425.561
1000
$0.802945
$802.945
2SC4102U3HZGT106R Product Details
2SC4102U3HZGT106R Overview
This device has a DC current gain of 180 @ 2mA 6V, which is the ratio between the base current and the collector current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).In the part, the transition frequency is 140MHz.The device has a 120V maximal voltage - Collector Emitter Breakdown.
2SC4102U3HZGT106R Features
the DC current gain for this device is 180 @ 2mA 6V the vce saturation(Max) is 500mV @ 1mA, 10mA a transition frequency of 140MHz
2SC4102U3HZGT106R Applications
There are a lot of ROHM Semiconductor 2SC4102U3HZGT106R applications of single BJT transistors.