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BSS63AHZGT116

  • BSS63AHZGT116
  • BSS63AHZGT116

BSS63AHZGT116

BSS63AHZGT116

ROHM Semiconductor

BSS63AHZGT116 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

BSS63AHZGT116 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power - Max 200mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 25mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max) 100V
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 200MHz
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.325983 $0.325983
10 $0.307531 $3.07531
100 $0.290123 $29.0123
500 $0.273701 $136.8505
1000 $0.258209 $258.209
BSS63AHZGT116 Product Details

BSS63AHZGT116 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 30 @ 25mA 1V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 10mA, 100mA.A 100V maximal voltage - Collector Emitter Breakdown is present in the device.

BSS63AHZGT116 Features


the DC current gain for this device is 30 @ 25mA 1V
the vce saturation(Max) is 500mV @ 10mA, 100mA

BSS63AHZGT116 Applications


There are a lot of ROHM Semiconductor BSS63AHZGT116 applications of single BJT transistors.

  • Muting
  • Inverter
  • Driver
  • Interface

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